NE68530-T1
vs
BFP196
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
CALIFORNIA EASTERN LABORATORIES
SIEMENS A G
Package Description
SMALL OUTLINE, R-PDSO-G3
SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Additional Feature
LOW NOISE
Collector Current-Max (IC)
0.03 A
0.1 A
Collector-Base Capacitance-Max
0.7 pF
1.4 pF
Collector-Emitter Voltage-Max
6 V
12 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
65
Highest Frequency Band
S BAND
L BAND
JESD-30 Code
R-PDSO-G3
R-PDSO-G4
Number of Elements
1
1
Number of Terminals
3
4
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
NPN
NPN
Power Dissipation Ambient-Max
0.15 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
AMPLIFIER
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
12000 MHz
7500 MHz
Base Number Matches
2
2
Rohs Code
Case Connection
COLLECTOR
JESD-609 Code
e0
Power Dissipation-Max (Abs)
0.58 W
Power Gain-Min (Gp)
16 dB
Terminal Finish
Tin/Lead (Sn/Pb)
Compare NE68530-T1 with alternatives
Compare BFP196 with alternatives