NE6500379A-T1
vs
NE6500496
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
CALIFORNIA EASTERN LABORATORIES
|
CALIFORNIA EASTERN LABORATORIES
|
| Package Description |
FLATPACK, R-PQFP-F4
|
FLANGE MOUNT, R-CDFM-F2
|
| Pin Count |
4
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
SOURCE
|
SOURCE
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
15 V
|
15 V
|
| Drain Current-Max (ID) |
5.6 A
|
4.5 A
|
| FET Technology |
METAL SEMICONDUCTOR
|
METAL SEMICONDUCTOR
|
| Highest Frequency Band |
S BAND
|
S BAND
|
| JESD-30 Code |
R-PQFP-F4
|
R-CDFM-F2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
2
|
| Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLATPACK
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
QUAD
|
DUAL
|
| Transistor Element Material |
GALLIUM ARSENIDE
|
GALLIUM ARSENIDE
|
| Base Number Matches |
1
|
1
|
| HTS Code |
|
8541.29.00.75
|
| Additional Feature |
|
HIGH RELIABILITY
|
| Operating Temperature-Max |
|
175 °C
|
| Power Dissipation Ambient-Max |
|
25 W
|
| Power Gain-Min (Gp) |
|
11 dB
|
| Transistor Application |
|
AMPLIFIER
|
|
|
|
Compare NE6500379A-T1 with alternatives
Compare NE6500496 with alternatives