NE5520379A
vs
NE5510279A-T1
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
NEC ELECTRONICS CORP
|
NEC ELECTRONICS CORP
|
| Package Description |
MICROWAVE, R-PQMW-F4
|
|
| Pin Count |
4
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
SOURCE
|
SOURCE
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
15 V
|
20 V
|
| Drain Current-Max (ID) |
1.5 A
|
1 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Highest Frequency Band |
L BAND
|
L BAND
|
| JESD-30 Code |
R-PQMW-F4
|
R-PQMW-F4
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
MICROWAVE
|
MICROWAVE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation Ambient-Max |
1.6 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
QUAD
|
QUAD
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
4
|
2
|
|
|
|
Compare NE5520379A with alternatives
Compare NE5510279A-T1 with alternatives