NE434S01-T1
vs
NE425S01-T1
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
RENESAS ELECTRONICS CORP
RENESAS ELECTRONICS CORP
Pin Count
4
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
FET Technology
JUNCTION
HETERO-JUNCTION
Operating Temperature-Max
125 °C
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
0.3 W
Surface Mount
YES
YES
Base Number Matches
2
3
Rohs Code
Additional Feature
LOW NOISE
Case Connection
SOURCE
Configuration
SINGLE
DS Breakdown Voltage-Min
3 V
Drain Current-Max (ID)
0.02 A
Highest Frequency Band
KU BAND
JESD-30 Code
X-PXMW-G4
Number of Elements
1
Number of Terminals
4
Operating Mode
DEPLETION MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
UNSPECIFIED
Package Style
MICROWAVE
Power Gain-Min (Gp)
10.5 dB
Qualification Status
Not Qualified
Terminal Form
GULL WING
Terminal Position
UNSPECIFIED
Transistor Application
AMPLIFIER
Transistor Element Material
GALLIUM ARSENIDE
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