NE425S01-T1
vs
NE425S01-T1
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
NEC COMPOUND SEMICONDUCTOR DEVICES LTD
|
NEC ELECTRONICS CORP
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
LOW NOISE
|
LOW NOISE
|
| Case Connection |
SOURCE
|
SOURCE
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
3 V
|
3 V
|
| Drain Current-Max (ID) |
0.02 A
|
0.02 A
|
| FET Technology |
HETERO-JUNCTION
|
HETERO-JUNCTION
|
| Highest Frequency Band |
KU BAND
|
KU BAND
|
| JESD-30 Code |
X-PXMW-G4
|
O-CRDB-G4
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
UNSPECIFIED
|
ROUND
|
| Package Style |
MICROWAVE
|
DISK BUTTON
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Gain-Min (Gp) |
10.5 dB
|
10.5 dB
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
UNSPECIFIED
|
RADIAL
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
GALLIUM ARSENIDE
|
SILICON
|
| Base Number Matches |
2
|
2
|
| Package Description |
|
DISK BUTTON, O-CRDB-G4
|
|
|
|
Compare NE425S01-T1 with alternatives
Compare NE425S01-T1 with alternatives