NE25139T1U73
vs
NE25139U73
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
CALIFORNIA EASTERN LABORATORIES
|
NEC ELECTRONICS AMERICA INC
|
| Package Description |
SMALL OUTLINE, R-PDSO-G4
|
SOT-143, 4 PIN
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
LOW NOISE
|
LOW NOISE
|
| Case Connection |
SOURCE
|
SOURCE
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
13 V
|
13 V
|
| Drain Current-Max (ID) |
0.035 A
|
|
| FET Technology |
METAL SEMICONDUCTOR
|
METAL SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
0.03 pF
|
0.03 pF
|
| Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
ULTRA HIGH FREQUENCY BAND
|
| JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Mode |
DUAL GATE, DEPLETION MODE
|
DEPLETION MODE
|
| Operating Temperature-Max |
125 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Gain-Min (Gp) |
16 dB
|
16 dB
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
GALLIUM ARSENIDE
|
GALLIUM ARSENIDE
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare NE25139T1U73 with alternatives
Compare NE25139U73 with alternatives