NE25139T1U71
vs
NE25139T1U71
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
NEC ELECTRONICS AMERICA INC
|
CALIFORNIA EASTERN LABORATORIES
|
Package Description |
SOT-143, 4 PIN
|
SMALL OUTLINE, R-PDSO-G4
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
LOW NOISE
|
LOW NOISE
|
Case Connection |
SOURCE
|
SOURCE
|
Configuration |
SINGLE
|
SINGLE
|
DS Breakdown Voltage-Min |
13 V
|
13 V
|
FET Technology |
METAL SEMICONDUCTOR
|
METAL SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
0.03 pF
|
0.03 pF
|
Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
ULTRA HIGH FREQUENCY BAND
|
JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
4
|
Operating Mode |
DEPLETION MODE
|
DUAL GATE, DEPLETION MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Gain-Min (Gp) |
16 dB
|
16 dB
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
Transistor Element Material |
GALLIUM ARSENIDE
|
GALLIUM ARSENIDE
|
Base Number Matches |
1
|
1
|
Drain Current-Max (ID) |
|
0.015 A
|
Operating Temperature-Max |
|
125 °C
|
|
|
|
Compare NE25139T1U71 with alternatives
Compare NE25139T1U71 with alternatives