NDT456PJ23ZD84Z
vs
RF4E075ATTCR
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
ROHM CO LTD
Package Description
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
30 V
Drain Current-Max (ID)
7.5 A
7.5 A
Drain-source On Resistance-Max
0.03 Ω
0.0317 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G3
S-PDSO-N6
Number of Elements
1
1
Number of Terminals
3
6
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
SQUARE
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Pulsed Drain Current-Max (IDM)
20 A
30 A
Qualification Status
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
NO LEAD
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Rohs Code
Factory Lead Time
21 Weeks
Samacsys Manufacturer
ROHM Semiconductor
Avalanche Energy Rating (Eas)
10.6 mJ
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Terminal Finish
Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
10
Compare NDT456PJ23ZD84Z with alternatives
Compare RF4E075ATTCR with alternatives