NDS9956 vs HUF76105DK8T feature comparison

NDS9956 National Semiconductor Corporation

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HUF76105DK8T Rochester Electronics LLC

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown unknown
ECCN Code EAR99
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 30 V
Drain Current-Max (ID) 3.5 A 5 A
Drain-source On Resistance-Max 0.1 Ω 0.072 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8 R-PDSO-G8
Number of Elements 2 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Qualification Status Not Qualified COMMERCIAL
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Element Material SILICON SILICON
Base Number Matches 2 4
Pbfree Code Yes
Rohs Code Yes
Part Package Code SOIC
Package Description SOIC-8
Pin Count 8
JEDEC-95 Code MS-012AA
JESD-609 Code e3
Moisture Sensitivity Level NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING

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