NDS9953
vs
IRF8915PBF
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
NATIONAL SEMICONDUCTOR CORP
|
INTERNATIONAL RECTIFIER CORP
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SEPARATE, 2 ELEMENTS
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
20 V
|
20 V
|
Drain Current-Max (ID) |
2.3 A
|
8.9 A
|
Drain-source On Resistance-Max |
0.25 Ω
|
0.0183 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-G8
|
R-PDSO-G8
|
Number of Elements |
2
|
2
|
Number of Terminals |
8
|
8
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
P-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
2 W
|
2 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
2
|
Pbfree Code |
|
Yes
|
Rohs Code |
|
Yes
|
Part Package Code |
|
SOIC
|
Package Description |
|
LEAD FREE, SO-8
|
Pin Count |
|
8
|
Avalanche Energy Rating (Eas) |
|
15 mJ
|
JEDEC-95 Code |
|
MS-012AA
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Operating Temperature-Max |
|
150 °C
|
Peak Reflow Temperature (Cel) |
|
260
|
Pulsed Drain Current-Max (IDM) |
|
71 A
|
Terminal Finish |
|
MATTE TIN
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
Transistor Application |
|
SWITCHING
|
|
|
|
Compare NDS9953 with alternatives
Compare IRF8915PBF with alternatives