NDS9925A/S62Z
vs
IRF7757GPBF
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
NATIONAL SEMICONDUCTOR CORP
INFINEON TECHNOLOGIES AG
Package Description
SMALL OUTLINE, R-PDSO-G8
HALOGEN AND LEAD FREE, TSSOP-8
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
20 V
Drain Current-Max (ID)
4.5 A
4.8 A
Drain-source On Resistance-Max
0.06 Ω
0.035 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
Number of Elements
2
2
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
2 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Rohs Code
Additional Feature
HIGH RELIABILITY
JEDEC-95 Code
MO-153AA
JESD-609 Code
e3
Moisture Sensitivity Level
2
Power Dissipation-Max (Abs)
1.2 W
Terminal Finish
MATTE TIN
Compare NDS9925A/S62Z with alternatives
Compare IRF7757GPBF with alternatives