NDS8947/L86Z vs SI4394DY-E3 feature comparison

NDS8947/L86Z Texas Instruments

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SI4394DY-E3 Vishay Intertechnologies

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP VISHAY INTERTECHNOLOGY INC
Package Description SMALL OUTLINE, R-PDSO-G8 ,
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4 A 10 A
Drain-source On Resistance-Max 0.065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
Number of Elements 2 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 2 W
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Base Number Matches 1 2
Rohs Code Yes
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max (Abs) 2.7 W
Terminal Finish Matte Tin (Sn)

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