NDS8926/L86Z vs FDC637BNZ feature comparison

NDS8926/L86Z Texas Instruments

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FDC637BNZ Rochester Electronics LLC

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP ROCHESTER ELECTRONICS LLC
Package Description SMALL OUTLINE, R-PDSO-G8 ROHS COMPLIANT, SUPERSOT-6, 6 PIN
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 20 V
Drain Current-Max (ID) 5.5 A 6.2 A
Drain-source On Resistance-Max 0.035 Ω 0.024 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8 R-PDSO-G6
Number of Elements 2 1
Number of Terminals 8 6
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 2 W
Qualification Status Not Qualified COMMERCIAL
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 3
Pbfree Code Yes
Rohs Code Yes
Part Package Code SOT
Pin Count 6
Feedback Cap-Max (Crss) 117 pF
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

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