NDS8410L86Z
vs
JAN2N5545
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
SOLITRON DEVICES INC
|
| Part Package Code |
SOT
|
|
| Package Description |
SMALL OUTLINE, R-PDSO-G8
|
CYLINDRICAL, O-MBCY-W6
|
| Pin Count |
8
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SEPARATE, 2 ELEMENTS
|
| DS Breakdown Voltage-Min |
30 V
|
|
| Drain Current-Max (ID) |
10 A
|
|
| Drain-source On Resistance-Max |
0.015 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
JUNCTION
|
| JESD-30 Code |
R-PDSO-G8
|
O-MBCY-W6
|
| Number of Elements |
1
|
2
|
| Number of Terminals |
8
|
6
|
| Operating Mode |
ENHANCEMENT MODE
|
DEPLETION MODE
|
| Operating Temperature-Max |
150 °C
|
200 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
METAL
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
WIRE
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
No
|
| Rohs Code |
|
No
|
| JEDEC-95 Code |
|
TO-71
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Power Dissipation-Max (Abs) |
|
0.25 W
|
| Reference Standard |
|
MILITARY STANDARD (USA)
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare NDS8410L86Z with alternatives
Compare JAN2N5545 with alternatives