NDS356P
vs
NTR1P02T1
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
NATIONAL SEMICONDUCTOR CORP
|
ROCHESTER ELECTRONICS LLC
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.21.00.95
|
|
| Additional Feature |
LOGIC LEVEL COMPATIBLE
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
20 V
|
20 V
|
| Drain Current-Max (ID) |
1.1 A
|
1 A
|
| Drain-source On Resistance-Max |
0.21 Ω
|
0.18 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-236AB
|
TO-236AB
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Power Dissipation Ambient-Max |
0.46 W
|
|
| Power Dissipation-Max (Abs) |
0.5 W
|
|
| Qualification Status |
Not Qualified
|
COMMERCIAL
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN LEAD
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
4
|
2
|
| Pbfree Code |
|
No
|
| Part Package Code |
|
SOT-23
|
| Package Description |
|
MINIATURE, CASE 318-09, TO-236, 3 PIN
|
| Pin Count |
|
3
|
| Manufacturer Package Code |
|
CASE 318-09
|
| Peak Reflow Temperature (Cel) |
|
240
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
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