NDS335N
vs
NDS335N/S62Z
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
NATIONAL SEMICONDUCTOR CORP
|
| Part Package Code |
SOT
|
|
| Package Description |
SUPERSOT-3
|
SMALL OUTLINE, R-PDSO-G3
|
| Pin Count |
3
|
|
| Manufacturer Package Code |
SUPERSOT
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
20 V
|
20 V
|
| Drain Current-Max (ID) |
1.7 A
|
1.7 A
|
| Drain-source On Resistance-Max |
0.14 Ω
|
0.14 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
0.5 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin (Sn)
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
5
|
1
|
| HTS Code |
|
8541.21.00.95
|
| Additional Feature |
|
LOGIC LEVEL COMPATIBLE
|
| Case Connection |
|
ISOLATED
|
| JEDEC-95 Code |
|
TO-236AB
|
| Power Dissipation Ambient-Max |
|
0.46 W
|
|
|
|
Compare NDS335N with alternatives
Compare NDS335N/S62Z with alternatives