NDP03N60ZG vs SPA08N80C3 feature comparison

NDP03N60ZG onsemi

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SPA08N80C3 Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Not Recommended
Ihs Manufacturer ON SEMICONDUCTOR INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB TO-220AB
Package Description ROHS COMPLIANT, CASE 221A-09, 3 PIN FLANGE MOUNT, R-PSFM-T3
Pin Count 3 3
Manufacturer Package Code CASE 221A-09
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 100 mJ 340 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 800 V
Drain Current-Max (ID) 3 A 8 A
Drain-source On Resistance-Max 3.6 Ω 0.65 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 12 A 24 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 10
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH VOLTAGE
Case Connection ISOLATED
JESD-609 Code e3
Power Dissipation-Max (Abs) 40 W
Terminal Finish Tin (Sn)
Transistor Application SWITCHING

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