NDH8301NL99Z
vs
2N5545
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
CENTRAL SEMICONDUCTOR CORP
|
| Part Package Code |
SOT
|
TO-71
|
| Package Description |
SMALL OUTLINE, R-PDSO-G8
|
TO-71, 8 PIN
|
| Pin Count |
8
|
8
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
|
| DS Breakdown Voltage-Min |
20 V
|
|
| Drain Current-Max (ID) |
3 A
|
|
| Drain-source On Resistance-Max |
0.06 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
JUNCTION
|
| JESD-30 Code |
R-PDSO-G8
|
O-XBCY-W8
|
| Number of Elements |
2
|
|
| Number of Terminals |
8
|
8
|
| Operating Mode |
ENHANCEMENT MODE
|
DEPLETION MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
WIRE
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
14
|
| Pbfree Code |
|
No
|
| Rohs Code |
|
No
|
| JEDEC-95 Code |
|
TO-71
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
200 °C
|
| Power Dissipation-Max (Abs) |
|
0.25 W
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare NDH8301NL99Z with alternatives
Compare 2N5545 with alternatives