NDD03N60Z
vs
FQD3N60CTM-WS
feature comparison
Part Life Cycle Code |
Active
|
End Of Life
|
Ihs Manufacturer |
ONSEMI
|
ONSEMI
|
Reach Compliance Code |
compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Part Package Code |
|
TO-252 3L (DPAK)
|
Package Description |
|
PLASTIC, DPAK-3/2
|
Manufacturer Package Code |
|
369AS
|
Samacsys Manufacturer |
|
onsemi
|
Avalanche Energy Rating (Eas) |
|
150 mJ
|
Case Connection |
|
DRAIN
|
Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
|
600 V
|
Drain Current-Max (ID) |
|
2.4 A
|
Drain-source On Resistance-Max |
|
3.4 Ω
|
FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
|
TO-252AA
|
JESD-30 Code |
|
R-PSSO-G2
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Number of Elements |
|
1
|
Number of Terminals |
|
2
|
Operating Mode |
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
|
150 °C
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
SMALL OUTLINE
|
Polarity/Channel Type |
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
|
50 W
|
Pulsed Drain Current-Max (IDM) |
|
9.6 A
|
Surface Mount |
|
YES
|
Terminal Finish |
|
MATTE TIN
|
Terminal Form |
|
GULL WING
|
Terminal Position |
|
SINGLE
|
Transistor Application |
|
SWITCHING
|
Transistor Element Material |
|
SILICON
|
|
|
|
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