NDB706AL
vs
FDP8878
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
NATIONAL SEMICONDUCTOR CORP
|
ON SEMICONDUCTOR
|
Package Description |
SMALL OUTLINE, R-PSSO-G2
|
,
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Additional Feature |
LOGIC LEVEL COMPATIBLE
|
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min |
60 V
|
|
Drain Current-Max (ID) |
75 A
|
|
Drain-source On Resistance-Max |
0.015 Ω
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
Feedback Cap-Max (Crss) |
800 pF
|
|
JEDEC-95 Code |
TO-263AB
|
|
JESD-30 Code |
R-PSSO-G2
|
|
Number of Elements |
1
|
|
Number of Terminals |
2
|
|
Operating Mode |
ENHANCEMENT MODE
|
|
Operating Temperature-Max |
175 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
SMALL OUTLINE
|
|
Polarity/Channel Type |
N-CHANNEL
|
|
Power Dissipation Ambient-Max |
150 W
|
|
Pulsed Drain Current-Max (IDM) |
225 A
|
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
YES
|
|
Terminal Form |
GULL WING
|
|
Terminal Position |
SINGLE
|
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
|
Turn-off Time-Max (toff) |
550 ns
|
|
Turn-on Time-Max (ton) |
640 ns
|
|
Base Number Matches |
2
|
2
|
Rohs Code |
|
Yes
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
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