NAND512W3A3AN1E
vs
M29W320FB70N3SE
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NUMONYX
|
NUMONYX
|
| Part Package Code |
TSOP
|
TSOP
|
| Package Description |
TSOP1,
|
,
|
| Pin Count |
48
|
48
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.51
|
8542.32.00.51
|
| Access Time-Max |
12000 ns
|
|
| JESD-30 Code |
R-PDSO-G48
|
R-PDSO-G48
|
| Length |
18.4 mm
|
|
| Memory Density |
536870912 bit
|
|
| Memory IC Type |
FLASH
|
FLASH
|
| Memory Width |
8
|
|
| Number of Functions |
1
|
|
| Number of Terminals |
48
|
48
|
| Number of Words |
67108864 words
|
|
| Number of Words Code |
64000000
|
|
| Operating Mode |
ASYNCHRONOUS
|
|
| Operating Temperature-Max |
70 °C
|
|
| Operating Temperature-Min |
|
|
| Organization |
64MX8
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TSOP1
|
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE, THIN PROFILE
|
SMALL OUTLINE
|
| Parallel/Serial |
PARALLEL
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Programming Voltage |
3 V
|
3 V
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Seated Height-Max |
1.2 mm
|
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
|
| Supply Voltage-Min (Vsup) |
2.7 V
|
|
| Supply Voltage-Nom (Vsup) |
3 V
|
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Pitch |
0.5 mm
|
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Type |
NAND TYPE
|
NOR TYPE
|
| Width |
12 mm
|
|
| Base Number Matches |
2
|
1
|
| Additional Feature |
|
BOTTOM BOOT BLOCK
|
| Boot Block |
|
BOTTOM
|
|
|
|
Compare NAND512W3A3AN1E with alternatives
Compare M29W320FB70N3SE with alternatives