NAND512R4B2AZA6 vs NAND512R4B2CZA1 feature comparison

NAND512R4B2AZA6 Numonyx Memory Solutions

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NAND512R4B2CZA1 STMicroelectronics

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NUMONYX STMICROELECTRONICS
Part Package Code BGA BGA
Package Description TFBGA, TFBGA,
Pin Count 63 63
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 25000 ns 25000 ns
JESD-30 Code R-PBGA-B63 R-PBGA-B63
JESD-609 Code e0 e0
Length 12 mm 12 mm
Memory Density 536870912 bit 536870912 bit
Memory IC Type FLASH FLASH
Memory Width 16 16
Number of Functions 1 1
Number of Terminals 63 63
Number of Words 33554432 words 33554432 words
Number of Words Code 32000000 32000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 70 °C
Operating Temperature-Min -40 °C
Organization 32MX16 32MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA TFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Programming Voltage 1.8 V 1.8 V
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.05 mm 1.05 mm
Supply Current-Max 0.015 mA
Supply Voltage-Max (Vsup) 1.95 V 1.95 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL COMMERCIAL
Terminal Finish TIN LEAD TIN LEAD
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Type NAND TYPE
Width 9.5 mm 9.5 mm
Base Number Matches 2 2
Rohs Code No

Compare NAND512R4B2AZA6 with alternatives

Compare NAND512R4B2CZA1 with alternatives