NAND512R3B2BZA6E vs NAND512R3B2CZA6 feature comparison

NAND512R3B2BZA6E STMicroelectronics

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NAND512R3B2CZA6 Numonyx Memory Solutions

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Rohs Code Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer STMICROELECTRONICS NUMONYX
Part Package Code BGA BGA
Package Description TFBGA, TFBGA,
Pin Count 63 63
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 25000 ns 25000 ns
JESD-30 Code R-PBGA-B63 R-PBGA-B63
Length 12 mm 12 mm
Memory Density 536870912 bit 536870912 bit
Memory IC Type FLASH FLASH
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 63 63
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 64MX8 64MX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA TFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Programming Voltage 1.8 V 1.8 V
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.05 mm 1.05 mm
Supply Voltage-Max (Vsup) 1.95 V 1.95 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Width 9.5 mm 9.5 mm
Base Number Matches 1 4
JESD-609 Code e0
Supply Current-Max 0.015 mA
Terminal Finish TIN LEAD
Type NAND TYPE

Compare NAND512R3B2BZA6E with alternatives

Compare NAND512R3B2CZA6 with alternatives