NAND512R3A3BN1E
vs
NAND512R3A3CN6
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
NUMONYX
|
NUMONYX
|
Part Package Code |
TSOP
|
TSOP
|
Package Description |
12 X 20 MM, TSOP-48
|
12 X 20 MM, TSOP-48
|
Pin Count |
48
|
48
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.51
|
8542.32.00.51
|
Access Time-Max |
15000 ns
|
15000 ns
|
JESD-30 Code |
R-PDSO-G48
|
R-PDSO-G48
|
JESD-609 Code |
e3
|
e0
|
Length |
18.4 mm
|
18.4 mm
|
Memory Density |
536870912 bit
|
536870912 bit
|
Memory IC Type |
FLASH
|
FLASH
|
Memory Width |
8
|
8
|
Number of Functions |
1
|
1
|
Number of Terminals |
48
|
48
|
Number of Words |
67108864 words
|
67108864 words
|
Number of Words Code |
64000000
|
64000000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
70 °C
|
85 °C
|
Operating Temperature-Min |
|
-40 °C
|
Organization |
64MX8
|
64MX8
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
TSOP1
|
TSOP1
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE, THIN PROFILE
|
SMALL OUTLINE, THIN PROFILE
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Programming Voltage |
1.8 V
|
1.8 V
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Seated Height-Max |
1.2 mm
|
1.2 mm
|
Supply Voltage-Max (Vsup) |
1.95 V
|
1.95 V
|
Supply Voltage-Min (Vsup) |
1.65 V
|
1.65 V
|
Supply Voltage-Nom (Vsup) |
1.8 V
|
1.8 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
COMMERCIAL
|
INDUSTRIAL
|
Terminal Finish |
TIN
|
TIN LEAD
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Pitch |
0.5 mm
|
0.5 mm
|
Terminal Position |
DUAL
|
DUAL
|
Type |
SLC NAND TYPE
|
SLC NAND TYPE
|
Width |
12 mm
|
12 mm
|
Base Number Matches |
2
|
2
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare NAND512R3A3BN1E with alternatives
Compare NAND512R3A3CN6 with alternatives