NAND256W3A3DZA6E
vs
NAND256W3A1BZA6
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
STMICROELECTRONICS
STMICROELECTRONICS
Part Package Code
BGA
BGA
Package Description
BGA,
BGA,
Pin Count
63
63
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.51
8542.32.00.51
Category CO2 Kg
12
12
Compliance Temperature Grade
Industrial: -40C to +85C
Industrial: -40C to +85C
EU RoHS Version
RoHS 2 (2011/65/EU)
Candidate List Date
2011-06-20
2011-06-20
EFUP
e
50
Conflict Mineral Status
DRC Conflict Free
DRC Conflict Free
Conflict Mineral Status Source
CMRT V3.02
CMRT V3.02
Access Time-Max
12000 ns
12000 ns
JESD-30 Code
R-PBGA-B63
R-PBGA-B63
Memory Density
268435456 bit
268435456 bit
Memory IC Type
FLASH
FLASH
Memory Width
8
8
Number of Functions
1
1
Number of Terminals
63
63
Number of Words
33554432 words
33554432 words
Number of Words Code
32000000
32000000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
85 °C
85 °C
Operating Temperature-Min
-40 °C
-40 °C
Organization
32MX8
32MX8
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
BGA
BGA
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY
GRID ARRAY
Parallel/Serial
PARALLEL
PARALLEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Programming Voltage
3 V
3 V
Qualification Status
Not Qualified
Not Qualified
Supply Voltage-Max (Vsup)
3.6 V
3.6 V
Supply Voltage-Min (Vsup)
2.7 V
2.7 V
Supply Voltage-Nom (Vsup)
3 V
3 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
INDUSTRIAL
INDUSTRIAL
Terminal Form
BALL
BALL
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Number Matches
2
2
JESD-609 Code
e0
Terminal Finish
TIN LEAD
Compare NAND256W3A3DZA6E with alternatives
Compare NAND256W3A1BZA6 with alternatives