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NAND256R3A3BZA1F vs NAND256R3A1DZA6F feature comparison

NAND256R3A3BZA1F STMicroelectronics

Buy Now Datasheet

NAND256R3A1DZA6F STMicroelectronics

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer STMICROELECTRONICS STMICROELECTRONICS
Part Package Code BGA BGA
Package Description BGA, BGA,
Pin Count 63 63
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 15000 ns 15000 ns
JESD-30 Code R-PBGA-B63 R-PBGA-B63
Memory Density 268435456 bit 268435456 bit
Memory IC Type FLASH FLASH
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 63 63
Number of Words 33554432 words 33554432 words
Number of Words Code 32000000 32000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 85 °C
Operating Temperature-Min -40 °C
Organization 32MX8 32MX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code BGA BGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY GRID ARRAY
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Programming Voltage 1.8 V 1.8 V
Qualification Status Not Qualified Not Qualified
Supply Voltage-Max (Vsup) 1.95 V 1.95 V
Supply Voltage-Min (Vsup) 1.65 V 1.65 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL INDUSTRIAL
Terminal Form BALL BALL
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 2 2
Memory » Flash Memories
Memory » Flash Memories

Compare NAND256R3A3BZA1F with alternatives

Compare NAND256R3A1DZA6F with alternatives