NAND256R3A3AZA1E vs NAND256R3A3AZA1F feature comparison

NAND256R3A3AZA1E Numonyx Memory Solutions

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NAND256R3A3AZA1F STMicroelectronics

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NUMONYX STMICROELECTRONICS
Part Package Code BGA BGA
Package Description TFBGA, TFBGA, BGA55,8X12,32
Pin Count 55 55
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 10000 ns 10000 ns
JESD-30 Code R-PBGA-B55 R-PBGA-B55
Length 10 mm 10 mm
Memory Density 268435456 bit 268435456 bit
Memory IC Type FLASH FLASH
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 55 55
Number of Words 33554432 words 33554432 words
Number of Words Code 32000000 32000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 32MX8 32MX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA TFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Programming Voltage 1.8 V 1.8 V
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.05 mm 1.05 mm
Supply Voltage-Max (Vsup) 1.95 V 1.95 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Type NAND TYPE
Width 8 mm 8 mm
Base Number Matches 1 1
Command User Interface YES
Data Polling NO
JESD-609 Code e1
Number of Sectors/Size 2K
Package Equivalence Code BGA55,8X12,32
Page Size 512 words
Ready/Busy YES
Sector Size 16K
Standby Current-Max 0.00005 A
Supply Current-Max 0.015 mA
Terminal Finish TIN SILVER COPPER
Toggle Bit NO

Compare NAND256R3A3AZA1E with alternatives

Compare NAND256R3A3AZA1F with alternatives