NAND256R3A1DZA1 vs NAND256R3A2DZA6E feature comparison

NAND256R3A1DZA1 STMicroelectronics

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NAND256R3A2DZA6E Numonyx Memory Solutions

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Rohs Code No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer STMICROELECTRONICS NUMONYX
Part Package Code BGA BGA
Package Description BGA, BGA,
Pin Count 63 63
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 15000 ns 15000 ns
JESD-30 Code R-PBGA-B63 R-PBGA-B63
JESD-609 Code e0 e1
Memory Density 268435456 bit 268435456 bit
Memory IC Type FLASH FLASH
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 63 63
Number of Words 33554432 words 33554432 words
Number of Words Code 32000000 32000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 85 °C
Operating Temperature-Min -40 °C
Organization 32MX8 32MX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code BGA BGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY GRID ARRAY
Parallel/Serial PARALLEL PARALLEL
Programming Voltage 1.8 V 1.8 V
Qualification Status Not Qualified Not Qualified
Supply Voltage-Max (Vsup) 1.95 V 1.95 V
Supply Voltage-Min (Vsup) 1.65 V 1.65 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL INDUSTRIAL
Terminal Finish TIN LEAD TIN SILVER COPPER
Terminal Form BALL BALL
Terminal Position BOTTOM BOTTOM
Base Number Matches 2 2
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Type NAND TYPE

Compare NAND256R3A1DZA1 with alternatives

Compare NAND256R3A2DZA6E with alternatives