NAND256R3A1BZA6T
vs
NAND256R3A2DZA1F
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
NUMONYX
|
NUMONYX
|
Part Package Code |
BGA
|
BGA
|
Package Description |
BGA,
|
BGA,
|
Pin Count |
63
|
63
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.51
|
8542.32.00.51
|
Access Time-Max |
15000 ns
|
15000 ns
|
JESD-30 Code |
R-PBGA-B63
|
R-PBGA-B63
|
JESD-609 Code |
e0
|
e1
|
Memory Density |
268435456 bit
|
268435456 bit
|
Memory IC Type |
FLASH
|
FLASH
|
Memory Width |
8
|
8
|
Number of Functions |
1
|
1
|
Number of Terminals |
63
|
63
|
Number of Words |
33554432 words
|
33554432 words
|
Number of Words Code |
32000000
|
32000000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
85 °C
|
70 °C
|
Operating Temperature-Min |
-40 °C
|
|
Organization |
32MX8
|
32MX8
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
BGA
|
BGA
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY
|
GRID ARRAY
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
Programming Voltage |
1.8 V
|
1.8 V
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Supply Voltage-Max (Vsup) |
1.95 V
|
1.95 V
|
Supply Voltage-Min (Vsup) |
1.65 V
|
1.65 V
|
Supply Voltage-Nom (Vsup) |
1.8 V
|
1.8 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
INDUSTRIAL
|
COMMERCIAL
|
Terminal Finish |
TIN LEAD
|
TIN SILVER COPPER
|
Terminal Form |
BALL
|
BALL
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Type |
NAND TYPE
|
NAND TYPE
|
Base Number Matches |
2
|
2
|
|
|
|
Compare NAND256R3A1BZA6T with alternatives
Compare NAND256R3A2DZA1F with alternatives