NAND256R3A1BZA6E
vs
NAND256R3A1BZA1T
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
NUMONYX
STMICROELECTRONICS
Part Package Code
BGA
BGA
Package Description
BGA,
BGA,
Pin Count
63
63
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.51
8542.32.00.51
Access Time-Max
15000 ns
15000 ns
JESD-30 Code
R-PBGA-B63
R-PBGA-B63
JESD-609 Code
e1
e0
Memory Density
268435456 bit
268435456 bit
Memory IC Type
FLASH
FLASH
Memory Width
8
8
Number of Functions
1
1
Number of Terminals
63
63
Number of Words
33554432 words
33554432 words
Number of Words Code
32000000
32000000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
85 °C
70 °C
Operating Temperature-Min
-40 °C
Organization
32MX8
32MX8
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
BGA
BGA
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY
GRID ARRAY
Parallel/Serial
PARALLEL
PARALLEL
Peak Reflow Temperature (Cel)
260
Programming Voltage
1.8 V
1.8 V
Qualification Status
Not Qualified
Not Qualified
Supply Voltage-Max (Vsup)
1.95 V
1.95 V
Supply Voltage-Min (Vsup)
1.65 V
1.65 V
Supply Voltage-Nom (Vsup)
1.8 V
1.8 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
INDUSTRIAL
COMMERCIAL
Terminal Finish
TIN SILVER COPPER
TIN LEAD
Terminal Form
BALL
BALL
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Type
NAND TYPE
Base Number Matches
2
2
Rohs Code
Compare NAND256R3A1BZA6E with alternatives
Compare NAND256R3A1BZA1T with alternatives