NAND256R3A1BZA6 vs NAND256R3A1DZA1F feature comparison

NAND256R3A1BZA6 Numonyx Memory Solutions

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NAND256R3A1DZA1F STMicroelectronics

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NUMONYX STMICROELECTRONICS
Part Package Code BGA BGA
Package Description BGA, BGA,
Pin Count 63 63
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 15000 ns 15000 ns
JESD-30 Code R-PBGA-B63 R-PBGA-B63
JESD-609 Code e0
Memory Density 268435456 bit 268435456 bit
Memory IC Type FLASH FLASH
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 63 63
Number of Words 33554432 words 33554432 words
Number of Words Code 32000000 32000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 70 °C
Operating Temperature-Min -40 °C
Organization 32MX8 32MX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code BGA BGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY GRID ARRAY
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Programming Voltage 1.8 V 1.8 V
Qualification Status Not Qualified Not Qualified
Supply Voltage-Max (Vsup) 1.95 V 1.95 V
Supply Voltage-Min (Vsup) 1.65 V 1.65 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form BALL BALL
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Type NAND TYPE
Base Number Matches 2 2
Rohs Code Yes

Compare NAND256R3A1BZA6 with alternatives

Compare NAND256R3A1DZA1F with alternatives