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NAND128R4A2DN1E vs NAND128R4A3BN6F feature comparison

NAND128R4A2DN1E Numonyx Memory Solutions

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NAND128R4A3BN6F STMicroelectronics

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NUMONYX STMICROELECTRONICS
Part Package Code TSOP TSOP
Package Description TSOP1, TSOP1,
Pin Count 48 48
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 15000 ns 15000 ns
JESD-30 Code R-PDSO-G48 R-PDSO-G48
JESD-609 Code e3 e3
Length 18.4 mm 18.4 mm
Memory Density 134217728 bit 134217728 bit
Memory IC Type FLASH FLASH
Memory Width 16 16
Number of Functions 1 1
Number of Terminals 48 48
Number of Words 8388608 words 8388608 words
Number of Words Code 8000000 8000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 70 °C 85 °C
Operating Temperature-Min -40 °C
Organization 8MX16 8MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TSOP1 TSOP1
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Parallel/Serial PARALLEL PARALLEL
Programming Voltage 1.8 V 1.8 V
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.2 mm 1.2 mm
Supply Voltage-Max (Vsup) 1.95 V 1.95 V
Supply Voltage-Min (Vsup) 1.65 V 1.65 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL INDUSTRIAL
Terminal Finish TIN TIN
Terminal Form GULL WING GULL WING
Terminal Pitch 0.5 mm 0.5 mm
Terminal Position DUAL DUAL
Type NAND TYPE
Width 12 mm 12 mm
Base Number Matches 2 2
Memory » Flash Memories
Memory » Flash Memories

Compare NAND128R4A2DN1E with alternatives

Compare NAND128R4A3BN6F with alternatives