NAND04GW4B2DN6F
vs
NAND04GW4B2DN1E
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
NUMONYX
|
NUMONYX
|
Part Package Code |
TSOP
|
TSOP
|
Package Description |
TSSOP,
|
TSSOP,
|
Pin Count |
48
|
48
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.51
|
8542.32.00.51
|
Access Time-Max |
25000 ns
|
25000 ns
|
JESD-30 Code |
R-PDSO-G48
|
R-PDSO-G48
|
Length |
18.4 mm
|
18.4 mm
|
Memory Density |
4294967296 bit
|
4294967296 bit
|
Memory IC Type |
FLASH
|
FLASH
|
Memory Width |
16
|
16
|
Number of Functions |
1
|
1
|
Number of Terminals |
48
|
48
|
Number of Words |
268435456 words
|
268435456 words
|
Number of Words Code |
256000000
|
256000000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
85 °C
|
70 °C
|
Operating Temperature-Min |
-40 °C
|
|
Organization |
256MX16
|
256MX16
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
TSSOP
|
TSSOP
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
|
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Programming Voltage |
3 V
|
3 V
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Seated Height-Max |
1.2 mm
|
1.2 mm
|
Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
Supply Voltage-Min (Vsup) |
2.7 V
|
2.7 V
|
Supply Voltage-Nom (Vsup) |
3 V
|
3 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
INDUSTRIAL
|
COMMERCIAL
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Pitch |
0.5 mm
|
0.5 mm
|
Terminal Position |
DUAL
|
DUAL
|
Width |
12 mm
|
12 mm
|
Base Number Matches |
3
|
3
|
|
|
|
Compare NAND04GW4B2DN6F with alternatives
Compare NAND04GW4B2DN1E with alternatives