NAND04GR4B2DN6E vs NAND04GR3B2DN1F feature comparison

NAND04GR4B2DN6E Micron Technology Inc

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NAND04GR3B2DN1F Micron Technology Inc

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC MICRON TECHNOLOGY INC
Package Description , TSSOP, TSSOP48,.8,20
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Base Number Matches 3 3
Rohs Code Yes
Access Time-Max 30 ns
Command User Interface YES
Data Polling NO
JESD-30 Code R-PDSO-G48
Memory Density 4294967296 bit
Memory IC Type FLASH
Memory Width 8
Number of Sectors/Size 4K
Number of Terminals 48
Number of Words 536870912 words
Number of Words Code 512000000
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 512MX8
Package Body Material PLASTIC/EPOXY
Package Code TSSOP
Package Equivalence Code TSSOP48,.8,20
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Page Size 2K words
Parallel/Serial PARALLEL
Qualification Status Not Qualified
Ready/Busy YES
Sector Size 128K
Standby Current-Max 0.00005 A
Supply Current-Max 0.02 mA
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch 0.5 mm
Terminal Position DUAL
Toggle Bit NO

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