NAND01GW4B2BV1E
vs
NAND01GW4B2CV6F
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Obsolete
|
Ihs Manufacturer |
STMICROELECTRONICS
|
NUMONYX
|
Part Package Code |
SOIC
|
SOIC
|
Package Description |
VSSOP,
|
VSSOP,
|
Pin Count |
48
|
48
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.51
|
8542.32.00.51
|
Access Time-Max |
25000 ns
|
25000 ns
|
JESD-30 Code |
R-PDSO-G48
|
R-PDSO-G48
|
Length |
15.4 mm
|
15.4 mm
|
Memory Density |
1073741824 bit
|
1073741824 bit
|
Memory IC Type |
FLASH
|
FLASH
|
Memory Width |
16
|
16
|
Number of Functions |
1
|
1
|
Number of Terminals |
48
|
48
|
Number of Words |
67108864 words
|
67108864 words
|
Number of Words Code |
64000000
|
64000000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
70 °C
|
85 °C
|
Operating Temperature-Min |
|
-40 °C
|
Organization |
64MX16
|
64MX16
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
VSSOP
|
VSSOP
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH
|
SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Programming Voltage |
3 V
|
3 V
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Seated Height-Max |
0.65 mm
|
0.65 mm
|
Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
Supply Voltage-Min (Vsup) |
2.7 V
|
2.7 V
|
Supply Voltage-Nom (Vsup) |
3 V
|
3 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
COMMERCIAL
|
INDUSTRIAL
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Pitch |
0.5 mm
|
0.5 mm
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Width |
12 mm
|
12 mm
|
Base Number Matches |
1
|
1
|
Supply Current-Max |
|
0.03 mA
|
Type |
|
NAND TYPE
|
|
|
|
Compare NAND01GW4B2BV1E with alternatives
Compare NAND01GW4B2CV6F with alternatives