NAND01GW4B2AZA6E
vs
KFG1G16U2C-DIB6
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
NUMONYX
SAMSUNG SEMICONDUCTOR INC
Part Package Code
BGA
BGA
Package Description
TFBGA,
VFBGA,
Pin Count
63
63
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.51
8542.32.00.51
Access Time-Max
25000 ns
76 ns
JESD-30 Code
R-PBGA-B63
R-PBGA-B63
JESD-609 Code
e1
Length
12 mm
13 mm
Memory Density
1073741824 bit
1073741824 bit
Memory IC Type
FLASH
FLASH
Memory Width
16
16
Number of Functions
1
1
Number of Terminals
63
63
Number of Words
67108864 words
67108864 words
Number of Words Code
64000000
64000000
Operating Mode
ASYNCHRONOUS
SYNCHRONOUS
Operating Temperature-Max
85 °C
85 °C
Operating Temperature-Min
-40 °C
-40 °C
Organization
64MX16
64MX16
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
TFBGA
VFBGA
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
GRID ARRAY
Parallel/Serial
PARALLEL
PARALLEL
Peak Reflow Temperature (Cel)
260
Programming Voltage
3 V
3.3 V
Qualification Status
Not Qualified
Not Qualified
Seated Height-Max
1.05 mm
1 mm
Supply Voltage-Max (Vsup)
3.6 V
3.6 V
Supply Voltage-Min (Vsup)
2.7 V
2.7 V
Supply Voltage-Nom (Vsup)
3 V
3.3 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
INDUSTRIAL
INDUSTRIAL
Terminal Finish
TIN SILVER COPPER
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
9.5 mm
10 mm
Base Number Matches
3
1
Additional Feature
BOTTOM BOOT BLOCK
Boot Block
BOTTOM
Compare NAND01GW4B2AZA6E with alternatives
Compare KFG1G16U2C-DIB6 with alternatives