NAND01GW4B2AZA6E vs NAND01GW4A1BZA6F feature comparison

NAND01GW4B2AZA6E STMicroelectronics

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NAND01GW4A1BZA6F STMicroelectronics

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer STMICROELECTRONICS STMICROELECTRONICS
Part Package Code BGA BGA
Package Description TFBGA, BGA63,10X12,32 BGA,
Pin Count 63 63
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 25000 ns 12000 ns
Command User Interface YES
Data Polling NO
JESD-30 Code R-PBGA-B63 R-PBGA-B63
Length 12 mm
Memory Density 1073741824 bit 1073741824 bit
Memory IC Type FLASH FLASH
Memory Width 16 16
Number of Functions 1 1
Number of Sectors/Size 1K
Number of Terminals 63 63
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 64MX16 64MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA BGA
Package Equivalence Code BGA63,10X12,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY
Page Size 1K words
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Programming Voltage 3 V 3 V
Qualification Status Not Qualified Not Qualified
Ready/Busy YES
Seated Height-Max 1.05 mm
Sector Size 64K
Standby Current-Max 0.00005 A
Supply Current-Max 0.03 mA
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 2.7 V 2.7 V
Supply Voltage-Nom (Vsup) 3 V 3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Form BALL BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Toggle Bit NO
Width 9.5 mm
Base Number Matches 1 1
JESD-609 Code e1
Terminal Finish TIN SILVER COPPER

Compare NAND01GW4B2AZA6E with alternatives

Compare NAND01GW4A1BZA6F with alternatives