NAND01GW4A1DZA6T vs NAND01GW4A3BZA1T feature comparison

NAND01GW4A1DZA6T Numonyx Memory Solutions

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NAND01GW4A3BZA1T STMicroelectronics

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NUMONYX STMICROELECTRONICS
Part Package Code BGA BGA
Package Description BGA, BGA,
Pin Count 63 63
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 12000 ns 12000 ns
JESD-30 Code R-PBGA-B63 R-PBGA-B63
JESD-609 Code e0 e0
Memory Density 1073741824 bit 1073741824 bit
Memory IC Type FLASH FLASH
Memory Width 16 16
Number of Functions 1 1
Number of Terminals 63 63
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 70 °C
Operating Temperature-Min -40 °C
Organization 64MX16 64MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code BGA BGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY GRID ARRAY
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Programming Voltage 3 V 3 V
Qualification Status Not Qualified Not Qualified
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 2.7 V 2.7 V
Supply Voltage-Nom (Vsup) 3 V 3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL COMMERCIAL
Terminal Finish TIN LEAD TIN LEAD
Terminal Form BALL BALL
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Type NAND TYPE
Base Number Matches 2 2
Rohs Code No

Compare NAND01GW4A1DZA6T with alternatives

Compare NAND01GW4A3BZA1T with alternatives