NAND01GR4B2AZA1E vs KFM1G16Q2C-DEB8 feature comparison

NAND01GR4B2AZA1E Numonyx Memory Solutions

Buy Now Datasheet

KFM1G16Q2C-DEB8 Samsung Semiconductor

Buy Now Datasheet
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NUMONYX SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA BGA
Package Description TFBGA, VFBGA,
Pin Count 63 63
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 25000 ns 76 ns
JESD-30 Code R-PBGA-B63 R-PBGA-B63
JESD-609 Code e1
Length 12 mm 13 mm
Memory Density 1073741824 bit 1073741824 bit
Memory IC Type FLASH FLASH
Memory Width 16 16
Number of Functions 1 1
Number of Terminals 63 63
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Mode ASYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 85 °C
Operating Temperature-Min -30 °C
Organization 64MX16 64MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA VFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) 260
Programming Voltage 1.8 V 1.8 V
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.05 mm 1 mm
Supply Voltage-Max (Vsup) 1.95 V 1.95 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL OTHER
Terminal Finish TIN SILVER COPPER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 9.5 mm 10 mm
Base Number Matches 3 1
Additional Feature BOTTOM BOOT BLOCK
Boot Block BOTTOM

Compare NAND01GR4B2AZA1E with alternatives

Compare KFM1G16Q2C-DEB8 with alternatives