N82S25F
vs
54F189DMQB
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SIGNETICS CORP
|
NATIONAL SEMICONDUCTOR CORP
|
| Package Description |
DIP, DIP16,.3
|
DIP, DIP16,.3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
3A001.A.2.C
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
50 ns
|
32 ns
|
| JESD-30 Code |
R-GDIP-T16
|
R-XDIP-T16
|
| JESD-609 Code |
e0
|
|
| Memory Density |
64 bit
|
|
| Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
| Memory Width |
4
|
4
|
| Number of Functions |
1
|
|
| Number of Ports |
1
|
|
| Number of Terminals |
16
|
16
|
| Number of Words |
16 words
|
16 words
|
| Number of Words Code |
16
|
16
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
75 °C
|
125 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Organization |
16X4
|
16X4
|
| Output Characteristics |
OPEN-COLLECTOR
|
3-STATE
|
| Output Enable |
NO
|
|
| Package Body Material |
CERAMIC, GLASS-SEALED
|
CERAMIC
|
| Package Code |
DIP
|
DIP
|
| Package Equivalence Code |
DIP16,.3
|
DIP16,.3
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Supply Voltage-Max (Vsup) |
5.25 V
|
|
| Supply Voltage-Min (Vsup) |
4.75 V
|
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
TTL
|
TTL
|
| Temperature Grade |
COMMERCIAL EXTENDED
|
MILITARY
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Pitch |
2.54 mm
|
2.54 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
3
|
3
|
| Screening Level |
|
38535Q/M;38534H;883B
|
| Supply Current-Max |
|
0.055 mA
|
|
|
|
Compare N82S25F with alternatives
Compare 54F189DMQB with alternatives