N82S215I vs N82S115NB feature comparison

N82S215I Philips Semiconductors

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N82S115NB Philips Semiconductors

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SIGNETICS CORP SIGNETICS CORP
Package Description , DIP, DIP24,.6
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.71 8542.32.00.71
Access Time-Max 60 ns 60 ns
JESD-30 Code R-CDIP-T24 R-PDIP-T24
Memory Density 4096 bit 4096 bit
Memory IC Type OTP ROM OTP ROM
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 24 24
Number of Words 512 words 512 words
Number of Words Code 512 512
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 75 °C 75 °C
Operating Temperature-Min
Organization 512X8 512X8
Output Characteristics 3-STATE 3-STATE
Package Body Material CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Supply Voltage-Max (Vsup) 5.25 V 5.25 V
Supply Voltage-Min (Vsup) 4.75 V 4.75 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology BIPOLAR BIPOLAR
Temperature Grade COMMERCIAL EXTENDED COMMERCIAL EXTENDED
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position DUAL DUAL
Base Number Matches 3 3
Rohs Code No
JESD-609 Code e0
Package Code DIP
Package Equivalence Code DIP24,.6
Supply Current-Max 0.175 mA
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Pitch 2.54 mm

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Compare N82S115NB with alternatives