N82S191CN vs N82S191CN3 feature comparison

N82S191CN Philips Semiconductors

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N82S191CN3 Signetics

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Rohs Code No No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer PHILIPS SEMICONDUCTORS SIGNETICS CORP
Package Description DIP, DIP24,.6 DIP, DIP24,.3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.71 8542.32.00.71
Access Time-Max 35 ns 35 ns
JESD-30 Code R-PDIP-T24 R-PDIP-T24
JESD-609 Code e0 e0
Memory Density 16384 bit 16384 bit
Memory IC Type OTP ROM OTP ROM
Memory Width 8 8
Number of Terminals 24 24
Number of Words 2048 words 2048 words
Number of Words Code 2000 2000
Operating Temperature-Max 70 °C 75 °C
Operating Temperature-Min
Organization 2KX8 2KX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP DIP
Package Equivalence Code DIP24,.6 DIP24,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Qualification Status Not Qualified Not Qualified
Supply Current-Max 0.175 mA 0.175 mA
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology TTL BIPOLAR
Temperature Grade COMMERCIAL COMMERCIAL EXTENDED
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Base Number Matches 4 4
Number of Functions 1
Operating Mode ASYNCHRONOUS
Output Characteristics 3-STATE
Parallel/Serial PARALLEL
Supply Voltage-Max (Vsup) 5.25 V
Supply Voltage-Min (Vsup) 4.75 V

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