N82S191AN
vs
5962-8873401LA
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
WAFERSCALE INTEGRATION INC
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.71
Access Time-Max
55 ns
55 ns
JESD-30 Code
R-PDIP-T24
R-GDIP-T24
JESD-609 Code
e0
e0
Memory Density
16384 bit
16384 bit
Memory IC Type
OTP ROM
OTP ROM
Memory Width
8
8
Number of Functions
1
1
Number of Terminals
24
24
Number of Words
2048 words
2048 words
Number of Words Code
2000
2000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
75 °C
125 °C
Operating Temperature-Min
-55 °C
Organization
2KX8
2KX8
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
CERAMIC, GLASS-SEALED
Package Code
DIP
DIP
Package Equivalence Code
DIP24,.6
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Supply Current-Max
0.175 mA
0.12 mA
Supply Voltage-Max (Vsup)
5.25 V
5.5 V
Supply Voltage-Min (Vsup)
4.75 V
4.5 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
BIPOLAR
CMOS
Temperature Grade
COMMERCIAL EXTENDED
MILITARY
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Pitch
2.54 mm
Terminal Position
DUAL
DUAL
Base Number Matches
2
1
Package Description
CERAMIC, DIP-24
Screening Level
MIL-STD-883
Compare N82S191AN with alternatives
Compare 5962-8873401LA with alternatives