N82S135N
vs
TBP28LA22N1
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
ROCHESTER ELECTRONICS LLC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.71
|
8542.32.00.71
|
| Access Time-Max |
45 ns
|
|
| JESD-30 Code |
R-PDIP-T20
|
|
| JESD-609 Code |
e0
|
|
| Memory Density |
2048 bit
|
|
| Memory IC Type |
OTP ROM
|
OTP ROM
|
| Memory Width |
8
|
|
| Number of Functions |
1
|
|
| Number of Terminals |
20
|
|
| Number of Words |
256 words
|
|
| Number of Words Code |
256
|
|
| Operating Mode |
ASYNCHRONOUS
|
|
| Operating Temperature-Max |
75 °C
|
|
| Operating Temperature-Min |
|
|
| Organization |
256X8
|
|
| Output Characteristics |
3-STATE
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Code |
DIP
|
|
| Package Equivalence Code |
DIP20,.3
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
IN-LINE
|
|
| Parallel/Serial |
PARALLEL
|
|
| Qualification Status |
Not Qualified
|
|
| Supply Current-Max |
0.15 mA
|
|
| Supply Voltage-Max (Vsup) |
5.25 V
|
|
| Supply Voltage-Min (Vsup) |
4.75 V
|
|
| Supply Voltage-Nom (Vsup) |
5 V
|
|
| Surface Mount |
NO
|
|
| Technology |
BIPOLAR
|
|
| Temperature Grade |
COMMERCIAL EXTENDED
|
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Pitch |
2.54 mm
|
|
| Terminal Position |
DUAL
|
|
| Base Number Matches |
4
|
2
|
| Package Description |
|
,
|
|
|
|
Compare N82S135N with alternatives
Compare TBP28LA22N1 with alternatives