N82HS321CN3 vs N82S321N feature comparison

N82HS321CN3 Philips Semiconductors

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N82S321N NXP Semiconductors

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer PHILIPS SEMICONDUCTORS SIGNETICS CORP
Package Description DIP, DIP24,.3 DIP, DIP24,.6
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.71 8542.32.00.71
Access Time-Max 25 ns 70 ns
JESD-30 Code R-PDIP-T24 R-PDIP-T24
JESD-609 Code e0 e0
Memory Density 32768 bit 32768 bit
Memory IC Type OTP ROM OTP ROM
Memory Width 8 8
Number of Terminals 24 24
Number of Words 4096 words 4096 words
Number of Words Code 4000 4000
Operating Temperature-Max 70 °C 75 °C
Operating Temperature-Min
Organization 4KX8 4KX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP DIP
Package Equivalence Code DIP24,.3 DIP24,.6
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Qualification Status Not Qualified Not Qualified
Supply Current-Max 0.175 mA
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology TTL BIPOLAR
Temperature Grade COMMERCIAL COMMERCIAL EXTENDED
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Base Number Matches 4 3
Number of Functions 1
Operating Mode ASYNCHRONOUS
Output Characteristics 3-STATE
Parallel/Serial PARALLEL
Supply Voltage-Max (Vsup) 5.25 V
Supply Voltage-Min (Vsup) 4.75 V

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