MXUPTB28
vs
MQUPTB28E3/TR13
feature comparison
All Stats
Differences Only
Rohs Code
No
Yes
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
MICROSEMI CORP
Reach Compliance Code
compliant
unknown
Factory Lead Time
40 Weeks
Additional Feature
HIGH RELIABILITY, MIL-STD-750
LOW LEAKAGE CURRENT
Breakdown Voltage-Min
31 V
31 V
Clamping Voltage-Max
47.8 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-216AA
DO-216AA
JESD-30 Code
S-PSSO-G1
R-PDSO-G1
JESD-609 Code
e0
e3
Non-rep Peak Rev Power Dis-Max
1000 W
150 W
Number of Elements
1
1
Number of Terminals
1
1
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
SQUARE
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
2.5 W
2.5 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-PRF-19500
Rep Pk Reverse Voltage-Max
28 V
28 V
Reverse Current-Max
1 µA
Reverse Test Voltage
28 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
DUAL
Base Number Matches
2
1
Package Description
R-PDSO-G1
ECCN Code
EAR99
HTS Code
8541.10.00.50
Case Connection
ANODE
Moisture Sensitivity Level
1
Compare MXUPTB28 with alternatives
Compare MQUPTB28E3/TR13 with alternatives