MXUPTB10TR13E3
vs
MXUPTB10E3
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
MICROSEMI CORP
|
MICROCHIP TECHNOLOGY INC
|
| Part Package Code |
DO-216AA
|
|
| Package Description |
R-PDSO-G1
|
|
| Pin Count |
2
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Additional Feature |
LOW LEAKAGE CURRENT
|
HIGH RELIABILITY, MIL-STD-750
|
| Breakdown Voltage-Min |
11 V
|
11 V
|
| Case Connection |
ANODE
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
DO-216AA
|
DO-216AA
|
| JESD-30 Code |
R-PDSO-G1
|
S-PSSO-G1
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Non-rep Peak Rev Power Dis-Max |
150 W
|
1000 W
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
1
|
1
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
SQUARE
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity |
BIDIRECTIONAL
|
BIDIRECTIONAL
|
| Power Dissipation-Max |
2.5 W
|
2.5 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
10 V
|
10 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
MATTE TIN
|
MATTE TIN
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
SINGLE
|
| Base Number Matches |
1
|
2
|
| Factory Lead Time |
|
40 Weeks
|
| Samacsys Manufacturer |
|
Microchip
|
| Clamping Voltage-Max |
|
18 V
|
| Reference Standard |
|
AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-PRF-19500
|
| Reverse Current-Max |
|
2 µA
|
| Reverse Test Voltage |
|
10 V
|
|
|
|
Compare MXUPTB10TR13E3 with alternatives
Compare MXUPTB10E3 with alternatives