MXUPTB10E3/TR7 vs MAUPTB10 feature comparison

MXUPTB10E3/TR7 Microsemi Corporation

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MAUPTB10 Microsemi Corporation

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Rohs Code Yes No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Package Description R-PDSO-G1
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature LOW LEAKAGE CURRENT
Breakdown Voltage-Min 11 V 11 V
Case Connection ANODE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-216AA DO-216AA
JESD-30 Code R-PDSO-G1 S-PSSO-G1
JESD-609 Code e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 150 W 1000 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 10 V 10 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL SINGLE
Base Number Matches 1 2
Clamping Voltage-Max 18 V
Reference Standard AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500
Reverse Current-Max 2 µA
Reverse Test Voltage 10 V

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