MXUPT8R vs MVUPT8RE3/TR7 feature comparison

MXUPT8R Microsemi Corporation

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MVUPT8RE3/TR7 Microsemi Corporation

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP MICROSEMI CORP
Part Package Code DO-216AA
Package Description R-PDSO-G1 R-PDSO-G1
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Min 9 V 9 V
Case Connection CATHODE CATHODE
Clamping Voltage-Max 13.7 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-216AA DO-216AA
JESD-30 Code S-PSSO-G1 R-PDSO-G1
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 1000 W 150 W
Number of Elements 1 1
Number of Terminals 1 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 2.5 W 2.5 W
Qualification Status Not Qualified Not Qualified
Reference Standard AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max 8 V 8 V
Reverse Current-Max 2 µA
Reverse Test Voltage 8 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE DUAL
Base Number Matches 1 1
Additional Feature LOW LEAKAGE CURRENT
Moisture Sensitivity Level 1

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Compare MVUPT8RE3/TR7 with alternatives