MXSMLG33CA
vs
MVSMLG33CAE3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
MICROSEMI CORP
Reach Compliance Code
compliant
unknown
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Max
40.6 V
40.6 V
Breakdown Voltage-Min
36.7 V
36.7 V
Breakdown Voltage-Nom
38.65 V
38.65 V
Clamping Voltage-Max
53.3 V
162 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-215AB
DO-215AB
JESD-30 Code
R-PDSO-G2
R-PDSO-G2
JESD-609 Code
e0
e3
Moisture Sensitivity Level
1
1
Non-rep Peak Rev Power Dis-Max
3000 W
3000 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1.61 W
1.61 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
IEC-61000-4-2, 4-4, 4-5; MIL-19500
MIL-19500
Rep Pk Reverse Voltage-Max
33 V
33 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Base Number Matches
2
2
Part Package Code
DO-215AB
Package Description
R-PDSO-G2
Pin Count
2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Compare MXSMLG33CA with alternatives
Compare MVSMLG33CAE3 with alternatives